GaAs MMIC Mixer for 8-12GHz, Based on 0.5 micrometer Gate Length D-MESFETS. Volume 1. Design and Layout (GaAs MMIC Mixer voor 8-12GHz, Gerealiseered Met 0,5 micrometer Gate Lengte D-MESFETS. Deel 1. Ontwerp en Layout).

摘要

A description is given of the design of an 8-12 Ghz GAAS MMIC (Monolithic Microwave Integrated Circuit) mixer. The mixer consists of a dual-FET mixing element, active input and output matching and bias networks. The mixer is designed with the triquint HA-process which uses 0.5 microns gate length depletion mode MESFET devices. The design goals are a return loss better than -15DB for the inputs and output and a conversion gain better than ODB. The complete circuit is biased with a symmetrical power supply of + or - 5 volts and has autobiasing through on-chip bias networks. The estimated total power consumption of the circuit is 350mW. The dimensions of the chip are 1.4 X 1.4 MM. This report is part one of two reports and gives an in-depth description of the circuit design. Simulation results and chip layout are provided. A second report will give the measurement results as well as an evaluation of them. Keywords: Integrated circuits, X band, Microwaves, Gallium arsenide, Netherlands. (jhd)