GaN power devices are capable of delivering superior performance in high-power,high frequency and high-temperature power electronics applications.In this work, we present a vertical GaN-on-GaN Schottky barrier diode (SBD) with edge termination structure. Fig. 1 shows the schematic cross-section of the vertical GaN SBD. The effective carrier concentration in the ri GaN drift layer is 8x1015 cm 3. Plasma treatment was implemented around the active area to form a termination structure and suppress the electric field crowding effect. Pt/Au and Ti/Al stacks were deposited as Schottky and ohmic contact,respectively. The vertical GaN SBD exhibits a low RON,sp of 1.35 mΩ·cm2, high ION/IOFF of~1013 and turn-on voltage of 0.88 V (Fig.2). BV of the vertical GaN diode with termination structure is 995 V (at 0.1 A/cm2), which is significantly higher than 335 V of the control device without termination (Fig.3).BV vs. RoN,sp of the SBDs in this work and prior works are summarized in Fig.4.
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