Methods for solving epitaxial growth loading effect at different pattern density regions

摘要

A method for reducing an epitaxial growth loading effect in a patterned device includes forming a first trench and a second trench in a substrate and in a first insulating layer over the substrate to form a low pattern density region and a high pattern density region. The first trench has a larger cross-sectional area than the second trench. The method further includes isolating the first trench from the second trench by using a first mask. The method further include disposing a second insulating layer in the first trench. The method further includes removing a portion of the first mask in order to expose the second trench. The method further includes growing an epitaxial layer in the second trench.