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AlxGa1-xN 0.5x1 Method of manufacturing AlxGa1-xN 0.5x1 piezoelectric thin films with high crystallinity and their apparatus using the thin film
AlxGa1-xN 0.5x1 Method of manufacturing AlxGa1-xN 0.5x1 piezoelectric thin films with high crystallinity and their apparatus using the thin film
The present disclosure provides a method for manufacturing an Al x Ga 1-x N (0.5≤x≤1) piezoelectric thin film, the method comprising: forming a sacrificial layer on a sapphire film-forming substrate; and, growing an Al x Ga 1-x N (0.5≤x≤1) piezoelectric thin film on the sacrificial layer; including, growing an Al x Ga 1-x N (0.5≤x≤1) piezoelectric thin film Al x Ga 1-x N (0.5≤x≤1) piezoelectric, characterized in that it further comprises; prior to forming a first semiconductor layer of Al y Ga 1-y N (0.5≤y≤1) A method for manufacturing a thin film and a structure including the Al x Ga 1-x N (0.5≤x≤1) piezoelectric thin film.
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机译：本公开提供了一种制造Al X Ga 1-x N（0.5≤x≤1）压电薄膜的方法，该方法包括：在蓝宝石成膜基材上形成牺牲层; 并且，在牺牲层上生长Al X Ga 1-x N（0.5≤x≤1）压电薄膜; 包括，生长Al X Ga 1-x N（0.5≤x≤1）压电薄膜Al X Ga 1-x N（0.5≤x≤1）压电，其特征在于它还包括; 在形成Al Y Ga 1-Y N（0.5≤y≤1）的第一半导体层之前，用于制造薄膜的方法和包括Al X Ga 1-x N（0.5≤x≤1）压电薄的结构 电影。
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