AlxGa1-xN 0.5x1 Method of manufacturing AlxGa1-xN 0.5x1 piezoelectric thin films with high purity and their apparatus using the thin film

摘要

The present disclosure provides the steps of forming a stress control layer made of a group III nitride on a silicon film formation substrate by chemical vapor deposition (CVD); And, forming an Al _x Ga _1-x N (0.5≤x≤1) piezoelectric thin film on the stress control layer by a physical vapor deposition method at a temperature of 0.3Tm (Tm; melting point of the piezoelectric thin film material) or higher; A method for manufacturing an Al _x Ga _1-x N (0.5 ≤ _x ≤ ₁ ) piezoelectric thin film, and an Al _x Ga _1-x N (0.5 ≤ _x ≤ ₁ ) piezoelectric thin film device including the piezoelectric thin film. It's about how.