This disclosure is Al x Ga 1- a process for producing the x N (0.5≤x≤1) the piezoelectric thin film, forming a sacrificial layer on a sapphire deposition substrate, a sacrificial layer is chemical vapor deposition (CVD; Chemical Vapor Forming a sacrificial layer consisting of one of oxides including Group 3 nitride formed by Deposition) and Group 2 or Group 3 oxide formed by Physical Vapor Deposition (PVD); And, depositing an Al x Ga 1-x N ( 0.5≤x≤1) piezoelectric thin film on a sacrificial layer, as, Al x Ga 1 - x N (0.5≤x≤1) the piezoelectric thin film 0.3Tm (Tm; Depositing a piezoelectric thin film deposited by a physical vapor deposition method at a temperature equal to or higher than the melting point of the piezoelectric thin film material), comprising: Al x Ga 1-x N (0.5 ≤ x ≤ 1 ) It's about how.
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机译：本公开内容是Al x Ga 1 --用于生产 x N（0.5≤x≤1）的方法压电薄膜，在蓝宝石沉积衬底上形成牺牲层，该牺牲层是化学气相沉积（CVD;化学气相形成由包括通过沉积形成的第3族氮化物的氧化物之一）组成的牺牲层的第2族或第3族通过物理气相沉积（PVD）形成的氧化物;并且，在牺牲层 as，Al x Ga 1-x N （上）沉积 Al x Ga 1-x N（0.5≤x≤1）压电薄膜。 0.5≤x≤1）压电薄膜0.3Tm（Tm;在等于或高于压电薄膜材料的熔点的温度下沉积通过物理气相沉积法沉积的压电薄膜），包括：Al < Sub> x Ga 1 - x N（0.5≤ x ≤ 1 < / Sub>）。
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