首页> 外国专利> - 4H 6H VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME

- 4H 6H VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME

机译:- 光学级和碳化硅晶体的4H 6H钒补偿4H和6H单晶及其制备方法

摘要

The optical device comprises a vanadium compensated, high resistivity 6H or 4H polytype SiC single crystal to transmit light having a wavelength in the range of 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. The system comprises a light source for generating light having a wavelength in the range of 420 nm to 4.5 μm and a device for receiving and transmitting light, wherein the device comprises a vanadium compensated, high resistivity 6H or 4H polytype SiC contains single crystals. The present invention also relates to a method for crystallization and optical applications, comprising an aluminum doped SiC crystal with residual nitrogen and boron impurities, wherein the aluminum concentration is greater than the combined concentration of nitrogen and boron and the light absorption coefficient is less than about 0.4 cm −1 at wavelengths between about 400 nm and about 800 nm.
机译:光学器件包括钒补偿,高电阻率6H或4H多晶硅单晶SiC单晶,以将波长的光在420nm至4.5μm的范围内传输。 该装置可包括窗口,透镜,棱镜或波导。 该系统包括用于产生波长在420nm至4.5μm的光的光的光源,并且用于接收和透射光的装置,其中该装置包括钒补偿,高电阻率6h或4h polytype sic含有单晶。 本发明还涉及结晶和光学应用的方法,包括具有残留氮和硼杂质的铝掺杂SiC晶体,其中铝浓度大于氮和硼的组合浓度,光吸收系数小于约 波长为0.4cm -1,在约400nm和约800nm之间。

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