SEED CRYSTAL FOR GROWING 4H SILICON CARBIDE SINGLE CRYSTAL, 4H SILICON CARBIDE SINGLE CRYSTAL INGOT, AND METHOD FOR PRODUCING THE SEED CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a seed crystal for growing a 4H silicon carbide single crystal, which seed crystal gives an ingot capable of being sliced into lowly defective large-diameter 4H silicon carbide single crystal wafers. ;SOLUTION: The seed crystal has as the single crystal growth face a face which slants at 3-60 degrees toward one arbitrary direction within the scope of -45 to 45 degrees toward the [-1100] axis direction from the (11-20) face about the [000-1] C axis. By using such a single crystal growth seed crystal, a high-quality large-diameter 4H silicon carbide single crystal ingot can be obtained.;COPYRIGHT: (C)2004,JPO