METHOD FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE

摘要

The process includes the following steps:(a) A device is provided, including:-The GaN / InGaN structure comprises a doped Gan conductive layer (204) partially covered with an InGaN dielectric (100), a doped InGaN layer (101) and an undoped or weakly doped InGaN layer (102),-An electrical insulating layer (300) covering a doped Gan conductive layer (204) between the dielectric (100),(b) A doped Gan conductive layer (204) and a counter electrode (500) are connected to a voltage or current generator,(c) Immerse the device and the counter electrode (500) in the electrolyte solution,(d) A voltage or current is applied between the doped Gan conductive layer (204) and the second electrode (500) to make the doped InGaN layer (101) porous,(e) A relaxoepitaxial InGaN layer (400) is obtained by epitaxial formation of an InGaN layer on an InGaN medium (100).