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FEOL INTERCONNECT USED AS CAPACITANCE OVER FINS INSTEAD OF GATES
FEOL INTERCONNECT USED AS CAPACITANCE OVER FINS INSTEAD OF GATES
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机译:FEOL互连用作鳍片而不是栅极的电容
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摘要
Aspects of the invention include forming a semiconductor device. Gates are formed in a first direction over fins, the gates including gate material, the fins being formed in a second direction. Fin interconnects are formed in the first direction over the fins. A dielectric material is formed on the fins, and capacitor interconnects are formed over portions of the dielectric material in the first direction over the fins.
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