Method for manufacturing SiC epitaxial substrate

摘要

An SiC growth rate changing layer (2) is formed on the SiC bulk substrate (1) while the growth rate is faster than the initial growth rate of 2.0. Mu. M / h or less. The growth rate change rate of the SiC growth rate changing layer (2) is set to 720 μ M / H2 or less. The molar flow rate ratio of nitrogen to carbon at the start of growth of the SiC growth rate changing layer (2) is set to 2.4 or less.