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Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

     

摘要

原文如此,电影被在正常压力流动在 Si (111 ) 底层上加热聚苯乙烯 / 硅石 bilayer 方法修改准备在 1300 点周围的 Ar ??? 獩档牥吭潲獰档 ?????????????????

著录项

  • 来源
    《化学物理学报》|2008年第2期|151-155|共5页
  • 作者单位

    Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China;

    Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China;

    Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China;

    Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China;

    Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China;

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