Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings

摘要

Silicon solar cells may be made from either "P" type substrates with "N" type dopants to form the geometries or with "N" type substrates and "P" type dopants forming the junction. This invention relates to the dopant species employed, the improved method of application and junction formation, formation of insitu anti-reflective coatings, and improved metallization processing for silicon solar cells. The invention does not affect preparation of the silicon substrate prior to diffusion steps, and is applicable both to planar solar cells and to vertical-multijunction cells. This invention discloses an alternate process of junction formation using arsenic as dopant. The process is uniquely different in the fact that it simplifies the number of process steps by using the doped oxide for junction formation, metallization mask and as an anti- reflection surface layer.