Single longitudinal mode GaAs/GaAlAs double heterostructure laser

摘要

A heterojunction laser in which single longitudinal mode operation is achieved by heavily doping the active region of the laser. The dopent density should be approximately 10.sup.19 /cm.sup.3 when the dopent is zinc. A doping density as heavy as possible should be used when the dopent is germanium or any other acceptor impurity. The heavy doping density of the active region excludes the injection of holes into the active region and that exclusion results in single longitudinal mode operation.