首页> 外国专利> Thyristor structure has ignition intrinsic and its application to the embodiment of a bidirectional

Thyristor structure has ignition intrinsic and its application to the embodiment of a bidirectional

机译:晶闸管结构具有内在的点火特性,并应用于双向实施例中

摘要

This thyristor has a very much reduced sensitivity to parasitic triggering in the non-conducting state. It consists of a first emitter region (5), a first inhibit base region (3) adjacent to the first emitter region, a second main base region (2) and a second emitter region (4). The first emitter region is divided into several primary regions (5) which are electrically connected together through cathode contacts (6). The first base region (3) is divided into several regions connected electrically together by inhibit gate contacts (7). The latter contacts are connected to the cathode contacts (6) through a switch (9) enabling a short circuit between the inhibit gate and the cathode to be created so as to inhibit the self-firing capability of the thyristor. The thickness and doping of the base and emitter regions are chosen so that the thyristor is self-firing at normal ambient temperatures through the capacitive current alone when the alternating supply voltage falls to zero. IMAGE
机译:在非导通状态下,该晶闸管对寄生触发的灵敏度大大降低。它由第一发射极区(5),与第一发射极区相邻的第一禁止基极区(3),第二主基极区(2)和第二发射极区(4)组成。第一发射极区域被分成几个主要区域(5),这些主要区域通过阴极触点(6)电连接在一起。第一基极区域(3)被分成多个区域,这些区域通过禁止栅触点(7)电连接在一起。后者的触点通过开关(9)连接到阴极触点(6),使得能够在禁止栅极和阴极之间产生短路,从而抑制晶闸管的自点火能力。选择基极和发射极区域的厚度和掺杂,使得当交流电源电压降至零时,晶闸管在正常环境温度下仅通过电容性电流就可自燃。 <图像>

著录项

  • 公开/公告号FR2536909B1

    专利类型

  • 公开/公告日1985-03-29

    原文格式PDF

  • 申请/专利权人 CENTRE NAL RECHERC SCIENTIFIQUE;

    申请/专利号FR19820019728

  • 发明设计人

    申请日1982-11-25

  • 分类号H01L29/747;

  • 国家 FR

  • 入库时间 2022-08-22 07:56:01

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