Process for the real-tame control of the etching selectivity by analysis of the plasma gases in a reactive ion etching process, and reactor for carrying it out

摘要

The present invention relates to a real-time control method of etching in a fabrication process of electronic components of the type reactive ion etching of silicon wafers using a plasma created between two electrodes, characterized in that the analyzed the gaseous species of the plasma during etching, to at least one of the silicon wafers in situ can be removed from the influence of the plasma.; It also relates to a reactor for implementation having a vacuum chamber 31 having at least one electrode support 34 and 35 connected grounded electrode between which is provided a plasma, vacuum means, loading means and unloading wafers, means for introducing etching gas, characterized in that it comprises at least two wafer 40 pitches 33, means for subtracting at least one location in the plasma influences 37, said means and locations being movable relative to each other, and the gaseous species of the plasma analysis means.