METHOD FOR GROWTH OF CRYSTAL BY GAS-SOURCE MOLECULAR BEAM EPITAXY

摘要

PURPOSE:To remarkably reduce the rise time in changing the flow path from a stand-by side to a crystal growth side and improve throughput by charging a metal hydride to a primary side of a supply valve during a stand-by time in a crystal growth method by gas-source molecular beam epitaxy. CONSTITUTION:In a crystal growth method by gas-source molecular beam epitaxy which is carried out by adjusting a flow rate of a metal hydride and/or an organometallic compound to a prescribed value using a flow control device (e.g. 4a), then discharging the above-mentioned compound to a main pipe 10 for evacuation through a discharge valve (e.g. 4g) during a stand-by time and supplying the compound to a crystal growth chamber through a supply valve (e.g. 4b) and a cracking cell (e.g. 20) during a crystal growth time, the above- mentioned metal hydride is charged to a primary side of the supply valve (e.g. 4b) during the stand-by time. The above-mentioned charging operation is carried out by controlling the discharge valve (e.g. 4g) using a pressure regulator (e.g. 40).