Reduction of Dislocation in GaAs Single Crystal Growth by Vertical Temperature Gradient Reduction Method

摘要

The present invention relates to a method for reducing the dislocation density during the growth of a GaAs single crystal by the vertical temperature gradient reduction method. In order to decrease the dislocation density, it is necessary to change the axial temperature gradient of the temperature gradient or to change the cone angle of the boat to an acute angle 90 DEG, or a method of changing the growth rate of the crystal is used.;By using the method according to the present invention, a high-quality GaAs single crystal in which the etch pit density is lower than a conventional value is obtained.