METHOD FOR DECREASING DISLOCATION OF GAAS SINGLE CRYSTAL BY VERTICAL TEMPERATURE GRADIENT

摘要

The decreasing method of a dislocation density at GaAs single crystal growth by the vertical temperature gradient method is characterited by (a) inserting a seed into the quartz boat, and then growing the single crystal, (b) decreasing the temperature of the shaft direction from 10 C/cm, (c) changing the corn angle of the boat from 30 degree to 60 degree 90 degree, and (d) removing the support holder to flatten the solid-liquid boundary shape. The method decreases an etch pit density, and inhibits formation of the lineage by the local wetting and generation of the dislocation.