Hyperfrequency field effect transistor fabrication process - uses gold pin to form auto-aligned gate mounted on refactory base masking doped areas.

摘要

The process automatically aligns the gate of hyperfrequency field effect transistors. In order to align the gate (9) on the access zones (11) a refactory disk (8) is laid down on the substrate (3) in which double implantation has created the access zones (11) and contact areas. The refactory disk (8) forms a mask protecting the access zones during the formation of the gate by metallization. The gate is protected while additional layers are fabricated. USE/ADVANTAGE - Automatic alignment of hyperfrequency field effect transistors.