首页>
外国专利>
Semiconductor quantum well laser having a low threshold current density
Semiconductor quantum well laser having a low threshold current density
展开▼
机译:阈值电流密度低的半导体量子阱激光器
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention gives rise to a 1.3 &mgr;m tensile- strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 &mgr;m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
展开▼
机译:本发明产生了一种具有量子阱活性层的1.3μm拉伸应变量子阱激光器,该量子阱活性层可以在结构上被指定为In 1-x Ga x As y P sub。 1-y,X在0.42-0.55之间,Y在0.8-0.75之间。 InGaAsP活性层需要具有在1.0和1.5%之间的拉伸应力,并且可以在InP和GaAs之间没有任何实质性相分离的情况下被制造。 1.3μm拉伸应变量子阱激光器配备了非常微不足道的阈值电流密度,小于0.2kA / cm 2。优选的拉伸应变范围为1.2至1.4%左右。
展开▼