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Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
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机译:量子级联激光器中用于抑制电子泄漏和降低阈值电流密度的多量子阱结构
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摘要
Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.
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