Chemical vapor deposition, plasma enhanced chemical vapor deposition or method and apparatus for treating exhaust gas from plasma etch reactor

摘要

The present invention relates to a method and apparatus for treating exhaust gas from a CVD, PECVD, or plasma etch reactor, wherein an exhaust gas reactor constituting a heated artificial substrate is used to treat the exhaust gas, wherein the artificial substrate is a deposited high temperature chemical. A vapor deposition (HTCVD) reactant structure, in particular the HTCVD reactant is deposited by contacting the heated artificial substrate with the exhaust gas and is a method and apparatus for removing gas species that can be thermally deposited from the semiconductor manufacturing process exhaust gas.