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Process of exactly patterning layer to target configuration by using photo-resist mask formed with dummy pattern
Process of exactly patterning layer to target configuration by using photo-resist mask formed with dummy pattern
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机译:通过使用形成有虚构图案的光刻胶掩模将层精确图案化为目标配置的过程
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摘要
Tension takes place in a surface of a photo-resist mask due to a shrinkage in a post-development bake, and a recess formed in the photo- resist mask takes up the tension so as to maintain the adhesion to a semiconductor substrate and prevent a resist pattern from undesirable deformation.
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