首页>
外国专利>
Method for patterning semiconductor devices with a resolution down to 0.12 mum on a silicon substrate using oxynitride film and deep UV lithography
Method for patterning semiconductor devices with a resolution down to 0.12 mum on a silicon substrate using oxynitride film and deep UV lithography
展开▼
机译:使用氧氮化物膜和深紫外光刻在硅基板上对分辨率低至0.12μm的半导体器件进行构图的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating and patterning semiconductor devices with a resolution down to 0.12 mum on a substrate structure. The method begins by providing a substrate structure comprising various layers of oxide and/or nitride formed over either monocrystalline silicon or polycrystalline silicon. A silicon oxynitride layer is formed on the substrate structure. Key characteristics of the oxynitride layer include: a refractive index of between about 1.85 and 2.35 at a wavelength of 248 nm, an extinction coefficient of between 0.45 and 0.75 at a wavelength of 248 nm, and a thickness of between about 130 Angstroms and 850 Angstroms. A photoresist layer is formed over the silicon oxynitride layer and exposed at a wavelength of between about 245 nm and 250 nm; whereby during exposure at a wavelength of between 245 nm 250 nm, the silicon oxynitride layer provides a phase-cancel effect.
展开▼