首页> 外国专利> Void formation monitoring method for damascene structures, involves forming and cutting test structures then inspecting cross-sectional view and investigating void formation in damascene structure

Void formation monitoring method for damascene structures, involves forming and cutting test structures then inspecting cross-sectional view and investigating void formation in damascene structure

机译:大马士革结构的空隙形成监测方法,包括形成和切割测试结构,然后检查横截面图并调查大马士革结构中的空隙形成

摘要

The method involves forming test structures with two damascene structures that differ in their cross-sectional geometric parameter value. The test structures are cut to expose a cross-sectional view to both the damascene structures. The views are inspected and the void formation in each of the structure is investigated. Independent claims are also included for the following (a) computer readable storage medium (b) an integrated circuit chip with semiconductor circuit
机译:该方法包括形成具有两个镶嵌结构的测试结构,所述两个镶嵌结构的横截面几何参数值不同。切割测试结构以暴露两个镶嵌结构的横截面图。检查视图并调查每个结构中的空隙形成。对于以下(a)计算机可读存储介质(b)具有半导体电路的集成电路芯片,也包括独立权利要求

著录项

  • 公开/公告号DE10153763A1

    专利类型

  • 公开/公告日2003-05-28

    原文格式PDF

  • 申请/专利权人 ADVANCED MICRO DEVICES INC.;

    申请/专利号DE2001153763

  • 申请日2001-10-31

  • 分类号H01L21/768;H01L23/522;H01L23/544;H01L21/28;H01L21/66;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号