首页> 外国专利> SEMICONDUCTOR DEVICE HAVING DAMASCENE INTERCONNECTION STRUCTURE THAT PREVENTS VOID FORMATION BETWEEN INTERCONNECTIONS HAVING TRANSPARENT DIELECTRIC SUBSTRATE

SEMICONDUCTOR DEVICE HAVING DAMASCENE INTERCONNECTION STRUCTURE THAT PREVENTS VOID FORMATION BETWEEN INTERCONNECTIONS HAVING TRANSPARENT DIELECTRIC SUBSTRATE

机译:具有DAMASCENE互连结构的半导体器件,该结构可防止具有透明介电基质的互连之间的空隙形成

摘要

A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.
机译:半导体装置由具有通孔的第一绝缘层构成。第一互连,包括第一导电层,第一阻挡层和第一主互连,以及连接到第一导电层和第一阻挡层之一的第二互连。因此,半导体器件可以避免以下问题:由于电迁移,第一主互连的材料从连接至第二互连的部分转移而形成空隙,从而使第一互连与第二互连断开。

著录项

  • 公开/公告号US2010270675A1

    专利类型

  • 公开/公告日2010-10-28

    原文格式PDF

  • 申请/专利权人 YUSUKE HARADA;

    申请/专利号US20100829633

  • 发明设计人 YUSUKE HARADA;

    申请日2010-07-02

  • 分类号H01L23/52;H01L21/768;

  • 国家 US

  • 入库时间 2022-08-21 18:55:52

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