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Producing buried tunnel junction in surface-emitting semiconductor laser, comprises striping tunnel junction layer locally and heating to cause mass transfer from adjacent semiconductor layer
Producing buried tunnel junction in surface-emitting semiconductor laser, comprises striping tunnel junction layer locally and heating to cause mass transfer from adjacent semiconductor layer
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机译:在表面发射半导体激光器中产生掩埋隧道结,包括局部剥离隧道结层并加热以引起从相邻半导体层的传质
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摘要
The layer provided for a tunnel junction (1) is laterally stripped by material-selective etching to the desired diameter of the tunnel junction. In a second stage, it is heated in a suitable atmosphere. This continues until the etched gap is sealed by mass transfer from at least one semiconductor layer (2, 3) bordering on the tunnel junction. An independent claim is included for the corresponding semiconductor laser.
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