Making semiconductor layer with compensation structure for MOS transistor manufacture employs thermal oxidation conversion reaction influencing local dopant concentrations

摘要

Semiconductor layer (110) with first side (101) is prepared and doped with charge carriers of first and second types. Trench (20) extends into doped layer (110). Thermal oxidation conversion reaction changes regions of first semiconductor layer in sidewall regions of trench into semiconductor connecting layers (30). Concentration changes in both types of charge carrier result in regions (40) of layer (110) adjacent to connecting layer. A semiconductor layer (110) with a first side (101) is prepared. This is doped throughout with charge carriers of first and second conduction types. A trench (20) extends into the doped semiconductor layer (110). A conversion reaction (thermal oxidation) is brought about. This changes regions of the first semiconductor layer in sidewall regions of the trench into semiconductor connecting layers (30). Concentration changes in both types of charge carrier result, in regions (40) of the semiconductor layer (110) adjacent to the semiconductor connecting layer. An independent claim is included for a corresponding manufacturing process.