Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs HeterojunctionBipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants

摘要

InP based HBTs and HFETs are considered to be the best candidates for highfrequency devices as well as their applications in communication systems in term of their best performance. One of the key issues is to reduce the base resistance of the InGaAs base to achieve the desired high speed performance and low noise characteristics. The overall technical objective of this program is to optimize material properties for the realization of InP based HBTs with improved performance, in particular develop a commercially viable process for incorporation of Zn and C as the base dopant species in InGaAs for InP/InGaAs and InAlAs/InGaAs based HBTs. Preliminary studies were aimed at addressing p-type dopant incorporation in InGaAs. The technical approach for the development of InP based HBTs is as follows: Develop the process for Zn-doping in InGaAs; Develop the process for C-doping in InGaAs; Evaluate InP based HBTs with Zn-doped InGaAs base; Evaluate InP based HBTs with C-doped InGaAs base. Experimental activities during this reporting period have focused on developing the process (reproducibility, growth and doping uniformity) for achieving Zn-doping of the InGaAs base layer geared towards generation of the generic InP/InGaAs HBT structure.