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METHOD FOR PREPARING CRYSTAL THIN FILM OF P-TYPE SEMICONDUCTOR OF GALLIUM NITRIDE BY DUAL PULSED LASER VAPOR DEPOSITION PROCEDURE AND THIN FILM PREPARED BY THE SAME METHOD
METHOD FOR PREPARING CRYSTAL THIN FILM OF P-TYPE SEMICONDUCTOR OF GALLIUM NITRIDE BY DUAL PULSED LASER VAPOR DEPOSITION PROCEDURE AND THIN FILM PREPARED BY THE SAME METHOD
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机译:双脉冲激光沉积法制备氮化镓P型半导体晶体薄膜的方法及相同方法制备的薄膜
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摘要
PROBLEM TO BE SOLVED: To provide a method for preparing a crystal thin film of a p-type semiconductor of a gallium nitride by the dual pulsed laser vapor deposition procedure under an ammonia or nitrogen-radical atmosphere, and to provide a thin film prepared by the method.;SOLUTION: The preparing method of the thin film that prepares an epitaxial (single crystal) thin film of a p-type semiconducted Ga type group III nitride or the crystalline thin film on a substrate is characterized by performing the dual pulsed laser vapor deposition (dual PLAD) procedure using a target of a Ga type group III metal, a Ga type group III metal nitride or a mixture thereof as a film material and a target of a divalent metal or a nitride of a divalent metal as a dopant material for hole doping and alternately or simultaneously ablating these, or ablating the mixed target of both the film material and the added material with the pulsed laser ablation deposition means in the ammonia or nitrogen-radical atmosphere. The thin film is also provided by using the method.;COPYRIGHT: (C)2005,JPO&NCIPI
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