Properties of multilayer gallium and aluminum doped ZnO（GZO/AZO） transparent thin films deposited by pulsed laser deposition process

摘要

Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 °C shows the electrical resistivity of 4.18×10-4 Ω·cm, an electron concentration of 7.5×1020 /cm3, and carrier mobility of 25.4 cm2/(V·s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.