GaSb-BASED PHASE-CHANGE RECORDING FILM WITH HIGH CRYSTALLIZATION SPEED, AND SPUTTERING TARGET FOR FORMING IT

摘要

PROBLEM TO BE SOLVED: To provide a GaSb-based phase-change recording film with a high crystallization speed, and a sputtering target for forming it.;SOLUTION: In the GaSb-based phase-change recording film with the high crystallization speed, 8-14at.% Ga and 13-16at.% Pb are contained, and the rest has a composition composed of Sb and unavoidable impurities. The target is used for forming the GaSb-based phase-change recording film by sputtering.;COPYRIGHT: (C)2005,JPO&NCIPI