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Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

机译:非晶态和纳米晶化的Dc溅射沉积MgO薄膜的磁性

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摘要

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies.
机译:我们报告在其非晶态和纳米晶态的原始MgO薄膜中的室温铁磁性(RTFM)的系统研究。发现在包含O 2的工作气体气氛(N 2 + O 2)中使用金属Mg靶在Si衬底上沉积的原始MgO的直流溅射膜为X射线非晶态。发现在保持相同的工作气体总压力的同时,氧分压(PO2)约为10%至80%的所有这些膜都是铁磁性的。对于在PO2中沉积10%的MgO膜,室温饱和磁化强度(MS)值为2.68 emu / cm 3 增加到对于膜沉积的9.62 emu / cm 3 PO2为40%。但是,为了进一步增加沉积过程中的氧分压,MS值稳定下降。在600至800°C的温度下进行热退火时,薄膜会变成纳米晶体,并且随着晶粒尺寸的增加,退火时间越长,温度越高,MS就会降低。我们的研究清楚地指出,可以调整MgO薄膜的磁性。 MgO薄膜中的室温铁磁性归因于Mg阳离子空位的存在。

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