GaSb-BASED PHASE CHANGING TYPE RECORDING FILM WITH LOW MELTING POINT AND LOW CRYSTALLIZATION TEMPERATURE AND SPUTTERING TARGET FOR FORMING THE GaSb-BASED PHASE CHANGING TYPE RECORDING FILM

摘要

PROBLEM TO BE SOLVED: To provide a GaSb-based phase changing type recording film with a low melting point and a low crystallization temperature and a sputtering target for forming the GaSb-based phase changing type recording film.;SOLUTION: The GaSb-based phase changing type recording film with a low melting point comprising an Sb-based alloy comprising 5-20% Ga in terms of atomic%, in addition, less than 5 to 20% In, and remaining part being Sb and inevitable impurities, and the target for forming the GaSb-based phase changing type recording film by sputtering, are provided.;COPYRIGHT: (C)2005,JPO&NCIPI