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Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
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机译:氮化磷薄膜用作激光掺杂技术中的n型掺杂源
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摘要
An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.
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