Method and apparatus for Growth of Thin semiconductor layers in regime of atomic layer epitaxy

摘要

A single crystal substrate is Cyclically exposed to vapours of two Elementary sources, all being prepared in a Graphite Boat that has a Sliding part which is housed the substrate and a fixed part with holes that contains the Elementary sources.Between exposisciones sources, the substrate passes through a Vent Hole which is exposed to pure H2 that keeps Flowing In the Reactor containing the boat.Through the implementation of this process in an environment ISOTu00c9RMICO on the surface of the substrate, Growing a thin layer of chemical compound composed of two Elementary sources of Self regulated, one atomic layer thickness in each cycle.