首页>
外国专利>
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
展开▼
机译:GaN块状晶体基板的制造以及在GaN块状晶体基板上形成的半导体装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.
展开▼