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Method for Locally Modifying Electronic and Optoelectronic Properties of Crystalline Materials and Devices Made From Such Materials
Method for Locally Modifying Electronic and Optoelectronic Properties of Crystalline Materials and Devices Made From Such Materials
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机译:局部修改晶体材料和由这种材料制成的器件的电子和光电性能的方法
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摘要
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains a array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.
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