METHOD FOR LOCALLY MODIFYING ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CRYSTALLINE MATERIALS AND DEVICES MADE FROM SUCH MATERIALS

摘要

An electronic or optoelectronic device fabricated from a crystalline materialin which a parameter of a bandgap characteristic of said crystalline materialhas been modified locally by introducing distortions on an atomic scale in thelattice structure of said crystalline material and the electronic and/oroptoelectronic parameters of said device are dependent on the modification ofsaid bandgap is exemplified by a radiation emissive optoelectronicsemiconductor device which comprises a junction (10) formed from a p-typelayer (11) and an n-type layer (12), both formed from indirect bandgapsemiconductor material. The p-type layer (11) contains an array of dislocationloops which create a strain field to confine spatially and promote radiativerecombination of the charge carriers.