首页>
外国专利>
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
展开▼
机译:具有凹陷沟道晶体管结构的单晶体管浮体DRAM单元的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods of fabricating a single transistor floating body dynamic random access memory (DRAM) cell include forming a barrier layer on a semiconductor substrate. A body layer is formed on the barrier layer. An isolation layer is formed defining a floating body region within the body layer. A recess region is formed in the floating body region. A gate electrode is formed in the recess region. Impurity ions of a first conductivity type are implanted into a portion of the floating body region on a first side of the recess region to define a source region and into a portion of the floating body on an opposite side of the recess region to define a drain region to provide a floating body.
展开▼