METHOD OF DEPOSITING A DOPED ZINC OXIDE FILM, A CONDUCTIVE ZINC OXIDE FILM AND USE OF THE DOPED ZINC OXIDE FILM

摘要

A method for growing a doped zinc oxide film on a surface of a substrate by an ALD method using only two types of precursor sources is described. The method comprises a) reacting a precursor vapour mixture comprising a zinc precursor and a dopant precursor with the surface; b) purging with an inert gas; c) reacting a pulse of H20 with the surface; and d) purging with an inert gas, thereby obtaining a doped zinc oxide film, where the dopant is different from boron. Further the use of this method for obtaining optoelectronic devices comprising transparent and conductive zinc oxide films are disclosed. Also transparent conductive zinc oxide thin film doped with Al where the Al atoms are substantially equally distributed on an atomic layer are described.