首页> 外国专利> METHOD FOR PREPARING SILICON ON SAPPHIRE THIN FILM AND THE SILICON ON SAPPHIRE THIN FILM PREPARED BY THE SAME TO PREVENT LATTICE MISMATCH

METHOD FOR PREPARING SILICON ON SAPPHIRE THIN FILM AND THE SILICON ON SAPPHIRE THIN FILM PREPARED BY THE SAME TO PREVENT LATTICE MISMATCH

机译:制备蓝宝石薄膜上的硅的方法以及用相同方法制备的硅薄膜上的硅以防止晶格失配

摘要

PURPOSE: A method for preparing silicon on sapphire thin film and the silicon on sapphire thin film prepared by the same are provided to improve the interfacial property between the silicon layer and a sapphire.;CONSTITUTION: The method of manufacturing the silicon laminate sapphire thin film is provided. The silicon layer(210) is laminated on the sapphire substrate(200). A cation is injected into the silicon layer and then the amorphous layer is formed in the interface of the silicon layer and sapphire substrate. The amorphous layer is recrystallized by heat-treatment.;COPYRIGHT KIPO 2010
机译:目的:提供一种蓝宝石薄膜上的硅的制备方法,以及由该方法制备的蓝宝石薄膜上的硅,以提高硅层与蓝宝石之间的界面性能。组成:硅层压蓝宝石薄膜的制造方法提供。硅层(210)被层压在蓝宝石衬底(200)上。将阳离子注入硅层中,然后在硅层与蓝宝石衬底的界面中形成非晶层。通过热处理使非晶层重结晶。; COPYRIGHT KIPO 2010

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号