MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON THIN FILM, MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON THIN-FILM DEVICE, MANUFACTURING METHOD FOR SOLAR CELL DEVICE, SINGLE-CRYSTAL SILICON THIN FILM, AND SINGLE-CRYSTAL SILICON THIN-FILM DEVICE AND SOLAR CELL DEVICE INCLUDING THE SINGLE-CRYSTAL SILICON THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a single-crystal silicon thin film, which easily performs etching of a sacrificial layer when a single-crystal silicon thin film is manufactured using epitaxial lift off (ELO), a manufacturing method for a single-crystal silicon thin-film device, a manufacturing method for a solar cell device, a single-crystal silicon thin film, and a single-crystal silicon thin-film device and a solar cell device including the single-crystal silicon thin film.;SOLUTION: A sacrificial layer 2 which has etching selectivity to and has an epitaxial property with respect to silicon is provided on a surface of a single-crystal silicon substrate 1. A single-crystal silicon thin film 40 is epitaxially grown on the sacrificial layer 2. A plurality of penetration holes 42 are formed through the single-crystal silicon thin film 40. The sacrificial layer 2 is etched through the penetration holes 42, thereby separating a single-crystal silicon thin film 4.;COPYRIGHT: (C)2012,JPO&INPIT