Common housing for components having a high power density, in particular for igbts and diodes, with a low inductance and wire-free bond - compounds

摘要

Power semiconductor - housing with:a metal body, of a web section, of the for an electrical and mechanical connection with the aid of a conductive connecting means with active electrodes of at least two semiconductor - components is configured and has a connecting portion which extends from one edge of the web section, in order to the active electrodes of the semiconductors - components electrically with an external conductive body to connect;a first semiconductor - plate and a second semiconductors - platelets, the electrically and mechanically connected with the root section, are;a ceramic insulating body, which directly by bonding with one of its surfaces with a surface of the metallic body is connected; anda further metal body, which directly by bonding with a different opposite surface of the ceramic insulating body is connected.