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Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor
Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor
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机译:具有漏极扩展的MOS场效应晶体管的鳍片结构的多栅场效应晶体管的制造方法
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摘要
In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
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