SEMICONDUCTOR SUBSTRATE HAVING ALGAN/GAN HETEROSTRUCTURE AND HETEROSTRUCTURE FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A semiconductor substrate having AlGaN/GaN hetero-structure and hetero-structure field effect transistor are provided to prevent the reduction of electronics within a channel due to thinning of PN junction and quantum well by forming a Si delta doping layer on a p-type potential barrier. CONSTITUTION: A p-type potential barrier layer(110) is laminated on a substrate(100). The p-type potential barrier comprises p type GaN layer or a p-type AlGaN layer. A non-doping GaN layer(140) is laminated on the p-type potential barrier. An AlGaN layer(150) is laminated on the non-doping GaN layer. An Si doped layer(130) is formed between the p-type potential barrier and the non-doping GaN layer.