首页> 外文OA文献 >LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

【2h】

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

机译：alGaN / GaN异质结中的低频噪声场效应晶体管和金属氧化物半导体异质结构场效应晶体管

页面导航

著录项
相似文献
相关主题

著录项

作者
S. L. Rumyantsev; N. Pala; M. S. Shur; M. E. Levinshtein; P. A. Ivanov; M. Asif Khan; G. Simin; J. Yang; X. Hu; A. Tarakji; R. Gaska;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer [J] . Chun-Kai WANG, Shoou-Jinn CHANG, Yan-Kuin SU, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：光化学气相沉积SiO_2层的AlGaN / GaN / AlGaN双异质结构金属氧化物半导体半结构场效应晶体管的高温性能和低频噪声特性
2. Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric [J] . Kayis C., Leach J. H., Zhu C. Y., Electron Device Letters, IEEE . 2010,第9期

机译：带有HfAlO栅极介电层的AlGaN / GaN金属-氧化物-半导体异质结构场效应晶体管的低频噪声测量
3. Noise Analysis of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors with Photochemical-Vapor Deposition SiO_2 Layers [J] . Yu-Zung CHIOU Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：光化学气相沉积SiO_2层的AlGaN / GaN金属氧化物半导体异质结构场效应晶体管的噪声分析
4. AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer [C] . Z. Y. Fan, J. Li, J. Y. Lin, Material Research Society Symposium . 2003

机译：AlGaN / GaN金属氧化物 - 半导体异质结构场效应晶体管（MOSHFET），具有Δ掺杂的阻挡层
5. Process development and characterization of AlGaN/GaN heterostructure field-effect transistors [D] . Ping, Andrew Taiann 1999

机译：AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique [O] . Kayis Cemil, Zhu C. Y., Wu Mo, 2011

机译：使用低频噪声技术的AlGaN / GaN异质结构场效应晶体管中的场辅助发射
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

机译：m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

著录项

相似文献

相关主题

期刊订阅