BODY-TIED SOI TRANSISTOR AND METHOD FOR FABRICATION THEREOF

摘要

having a reduced body resistance body - there is provided a method for manufacturing a bonded SOI transistor. During the wafer manufacturing process, a semiconductor wafer is located in the ion implantation device, substantially between the beam path and the transistor gate 29 to a non-edge-device for the beam path to the ion implantation to obtain a perpendicular orientation of the twist (31 to 34) is directed to the first position. After the orientation in the first position, the ion species is implanted in a first implantation area. After the wafer has a second, substantially non-twisted orientation and rotation orthogonal orientation, in which another ion implantation is performed. The process continues in the same manner, thereby a desired number of additional injection zone until they produce a substantially non-perpendicular to the twist and the ion implantation is carried out. Halo or pocket implants injected waters examples of the type that can be applied with the present technology.