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High-K Metal Gate Electrode Structures Formed by a Replacement Gate Approach Based on Superior Planarity of Placeholder Materials
High-K Metal Gate Electrode Structures Formed by a Replacement Gate Approach Based on Superior Planarity of Placeholder Materials
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机译:基于占位符材料优越平面性的置换门方法形成的高K金属栅电极结构
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摘要
When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, superior process uniformity may be achieved by implementing at least one planarization process after the deposition of the placeholder material, such as the polysilicon material, and prior to actually patterning the gate electrode structures.
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